Hua Wang, Martha R. McCartney, et al.
Journal of Applied Physics
The spin torque switching current density is measured for magnetic tunnel junctions containing a CoFeB free layer. We find that the insertion of an ultra-thin boron layer near the free layer/tunnel barrier interface gives rise to an increased resistance-area product and to a reduction in the switching current density. This is attributed to a lower tunneling matrix element near the inserted boron. As a result, the injected current is concentrated within smaller areas of the free layer, which leads to an overall decrease in the switching current density. © 2012 American Institute of Physics.
Hua Wang, Martha R. McCartney, et al.
Journal of Applied Physics
Li Gao, Xin Jiang, et al.
Applied Physics Letters
Masamitsu Hayashi, Luc Thomas, et al.
Physical Review Letters
Stuart Parkin
International Journal of Modern Physics B