Range distribution of implanted ions in SiO₂, Si ₃N₄, and Al₂O₃

Abstract

Backscattering measurements with 2.0-MeV He+ ions were used to determine the range distribution of Zn, Ga, As, Se, Cd, and Te implanted in SiO2, Si3N4, and Al2O3 at energies between 150 and 300 keV. Values of the projected range were systematically greater than LSS predictions by factors of 1.2-1.5. In normalized LSS units, the projected range, ρp, as a function of energy, ε, consistently followed within experimental error the relation ρp=2.7ε, where an arithmetic average atomic number of 10 and arithmetic average atomic mass of 20 apply to all three target species. © 1973 American Institute of Physics.