Publication
IEEE JQE
Paper

Raman Spectroscopy and the Characterization of Buried Semiconductor Layers

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Abstract

The ability of Raman scattering to characterize a subnanometer buried layer of Ge in Si (100) with respect to composition, strain, homogeneity, structure, and thickness is described. The inability of Raman scattering to provide quantitative information on the thickness of a buried thin layer is discussed. © 1989 IEEE

Date

01 Jan 1989

Publication

IEEE JQE

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