Mihail P. Petkov, Marc H. Weber, et al.
Applied Physics Letters
The use of state-of-the-art microelectronic devices in space radiation environments faces new challenges with the adoption of low dielectric constant (low-k) materials as interlevel dielectrics. This is demonstrated in a preliminary study of methyl-silsesquioxane low-k films. We report radiation damage, induced by a 2-kev low- current.density (∼ 2 × 106 s-1cm-2) positron beam, and observed by positron annihilation spectroscopy.
Mihail P. Petkov, Marc H. Weber, et al.
Applied Physics Letters
Mihail P. Petkov, Marc H. Weer, et al.
Applied Physics Letters
Ethan H. Cannon, A.J. KleinOsowski, et al.
ICICDT 2007
James R. Schwank, Marty R. Shaneyfelt, et al.
IEEE TNS