Publication
Journal of Electronic Materials
Paper

Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors

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Abstract

Oxygen has always been considered to be a major contaminant in the organo-metallic vapor phase epitaxy (OMVPE) of Al x Ga1-x As. Oxygen incorporation has been invoked as a contributor to low luminescence efficiency, dopant compensation and degradation of surface morphology among other deleterious effects. This study presents quantitative measurements of oxygen concentration in nominally high purity Al x Ga1-x As. The oxygen concentration was measured as a function of alloy composition, growth temperature, and V/III ratio. Quantitative secondary ion mass spectroscopy (SIMS) measurements were used to determine the oxygen content as well as the carbon concentration in the film. The oxygen concentration increases with decreased growth temperature and V/III ratio while increasing superlinearly with Al content in the epitaxial layer. © 1992 TMS.

Date

01 Mar 1992

Publication

Journal of Electronic Materials

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