N. Inoue, F. Ito, et al.
IITC 2013
The resistance to plasma-induced damage of various nanoporous, ultra low- κ porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of Si- CH3 and Si (CH3) 2 bonding exhibited less plasma damage than similar films with lower carbon content. © 2008 American Institute of Physics.
N. Inoue, F. Ito, et al.
IITC 2013
C. Michael Greenlief, Stephen M. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Ph. Avouris, Yu-Ming Lin, et al.
DRC 2010
E. T. Todd Ryan, Stephen M. Gates, et al.
Journal of Applied Physics