PaperAdsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surfaceStephen M. GatesSurface Science
PaperEffect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnectsE. T. Todd Ryan, Stephen M. Gates, et al.Journal of Applied Physics
ReviewProgress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects - State of the artAlfred Grill, Stephen M. Gates, et al.Applied Physics Reviews
PaperProperty modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damageE. Todd Ryan, Stephen M. Gates, et al.Journal of Applied Physics
