Fengnian Xia, Mathias Steiner, et al.
Nature Nanotechnology
Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multilayer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n-and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two. © 2010 American Institute of Physics.
Fengnian Xia, Mathias Steiner, et al.
Nature Nanotechnology
Joseph Abel, Akitomo Matsubayashi, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Mathias Steiner, Fengnian Xia, et al.
SPIE Nanoscience + Engineering 2008
Yu-Ming Lin, Keith A. Jenkins, et al.
Nano Letters