Graphene-based fast electronics and optoelectronics
Ph. Avouris, Yu-Ming Lin, et al.
IEDM 2010
Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multilayer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n-and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two. © 2010 American Institute of Physics.
Ph. Avouris, Yu-Ming Lin, et al.
IEDM 2010
Wenjuan Zhu, Damon B. Farmer, et al.
Applied Physics Letters
Zhihong Chen, Yu-Ming Lin, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Damon B. Farmer, Vasili Perebeinos, et al.
Physical Review B - CMMP