Properties of AI2O3 Films Deposited from the AICI3, CO2, and H2 System

Abstract

Films of aluminum oxide (AI2O3) have been deposited in a hot-walled chemical vapor deposition reactor using AICI3, CO2, and H2 gas. The deposition rate and film properties such as structure, composition, index of refraction, dielectric strength, and electrical conductivity were evaluated as a function of deposition temperature and gas input rates. Although the dielectric strength increased with decreasing grain size, the electrical conductivity was better correlated to deposition temperature than to grain size. Conditions were determined to optimize the dielectric strength of films grown in the temperature range 700°-900°C. Depending on the exact conditions, the deposition rate could be limited by either the AICI3 or the CO2 input rate. © 1978, The Electrochemical Society, Inc. All rights reserved.