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Publication
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Probing surface and bulk chemistry in resist films using near edge x-ray absorption fine structure
Abstract
The utility of near-edge x-ray absorption fine structure (NEXAFS) for providing detailed chemical information about lithographic interfaces, by focusing initially on the T-topping/closure issue and probing the surface and bulk composition of the photo-acid generator in a model resist formulation was demonstrated. In addition, the extent of deprotection at the resist surface was also studied as a function of postexposure bake time using NEXAFS. The resultant data were analyzed in detail.