Ellen J. Yoffa, David Adler
Physical Review B
Shubnikov-de Haas and persistent photoconductivity measurements are used to study the mobility, free electron density (n) and the occupancy of the DX centre in heavily doped n-GaAs as a function of doping level and hydrostatic pressure. The results show that the DX centre produces a resonant donor level between the γ - and L-conduction band minima at a concentration comparable with the doping level. For the Si-doped samples, comparison with local vibration mode measurements indicates that the DX level can be identified with SiGaThe level acts to pin the Fermi energy at electron concentrations around 1.8 ȕ 1019 cm‒3Analysis of the results indicates that macroscopic charge separation is not responsible for persistent photoconductivity in these samples. © 1988 IOP Publishing Ltd.
Ellen J. Yoffa, David Adler
Physical Review B
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
R. Ghez, J.S. Lew
Journal of Crystal Growth
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry