Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Potential methods for atomic layer epitaxy growth of Si using halogenated silane precursors are discussed. One method uses alternating exposures of Si2H6 and Si2Cl6. This method deposits "new" Si (Si*) on Si(100) as demonstrated through the attenuation of a boron "marker" layer. Another method uses self-terminating adsorption of SiClH3 or SiCl2H2 at about 500°C, followed by exposure to atomic H. Only the initial adsorption step of this method is studied here. © 1993.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Eloisa Bentivegna
Big Data 2022
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ACS Nano