K.N. Tu
Materials Science and Engineering: A
Potential methods for atomic layer epitaxy growth of Si using halogenated silane precursors are discussed. One method uses alternating exposures of Si2H6 and Si2Cl6. This method deposits "new" Si (Si*) on Si(100) as demonstrated through the attenuation of a boron "marker" layer. Another method uses self-terminating adsorption of SiClH3 or SiCl2H2 at about 500°C, followed by exposure to atomic H. Only the initial adsorption step of this method is studied here. © 1993.
K.N. Tu
Materials Science and Engineering: A
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
J.K. Gimzewski, T.A. Jung, et al.
Surface Science