J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
A modified plasma-enhanced chemical vapor deposition process (He-PECVD) is described, and used to deposit high quality silicon-based insulators at low substrate temperature (≤ 350°C). This process utilizes very high levels of helium dilution of the reactive gases to eliminate many of the problems normally associated with plasma deposition. SiO2 films deposited by He-PECVD approach the standards of high quality thermally grown oxide and very thin films (≤ 100 Å) with excellent electrical integrity can be deposited over large areas routinely. MOSFET's incorporating deposited gate oxides highlight the fundamental difference between deposition and growth by revealing a strong correlation between the ultimate device performance and pre-deposition silicon surface treatment. By minimizing the extent of process-induced surface damage, good quality deposited oxide FET's can be fabricated without the need for additional high temperature annealing. The He-PECVD process can also be applied to the deposition of Si3N4 films, also with marked improvements in film quality. © 1989.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Peter J. Price
Surface Science
J.A. Barker, D. Henderson, et al.
Molecular Physics