Conference paper
Surface processes in plasma-assisted etching
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Paper
Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study
Abstract
The plasma-assisted etching of magnetron-sputtered polycrystalline tungsten films in CF4-H2 and CF4-O2 glow discharges has been studied as a function of ion energy using quartz-crystal microbalance methods supplemented by vacuum-transfer Auger electron spectroscopy and actinometric emission spectroscopy.
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