Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We have measured the in-plane motion of photoexcited carriers in semiconductor quantum wells and have discovered several surprising results. The effective diffusivity of the carriers at densities below n=2×1011 cm-2 is found to depend upon the excitation level, possibly indicating defect-limited diffusion or phonon-wind effects. Above this density the spatial profiles exhibit two distinct components with widely differing diffusivities. We postulate that the slowly diffusing component represents carriers which are "thermally confined" to a phonon hot spot. © 1988 The American Physical Society.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Surface Review and Letters
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
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MRS Fall Meeting 2020