F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
An As-stabilized Al0.7Ga0.3As(100) surface grown by molecular-beam epitaxy was studied using photoemission techniques. Core-level shifts and relative emission intensities at the surface were used to deduce the surface structure. High-energy-electron-diffraction and surface-contamination-rate measurements were also made. The results indicate that this surface is very similar to the As-stabilized GaAs(100)-c (2×8) surface in structure with complete depletion of Al at the surface. © 1982 The American Physical Society.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
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Journal of Low Temperature Physics