Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
An As-stabilized Al0.7Ga0.3As(100) surface grown by molecular-beam epitaxy was studied using photoemission techniques. Core-level shifts and relative emission intensities at the surface were used to deduce the surface structure. High-energy-electron-diffraction and surface-contamination-rate measurements were also made. The results indicate that this surface is very similar to the As-stabilized GaAs(100)-c (2×8) surface in structure with complete depletion of Al at the surface. © 1982 The American Physical Society.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
A. Gangulee, F.M. D'Heurle
Thin Solid Films