E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Photochemical hole-burning was used to study vibronic relaxation in the S1←S0 transition of H2P in n-octane at 4.2 K. Vibronic lines up to 1600 cm-1 above the origin were measured. The holewidths differ strongly and do not appear to be correlated with the excess in energy above the 0-0 transition. © 1979.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Ellen J. Yoffa, David Adler
Physical Review B
T.N. Morgan
Semiconductor Science and Technology