About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
MRS Spring Meeting 1996
Conference paper
Phase formation in Cu(Sn) alloy thin films
Abstract
The interdiffusion of Cu and Sn and the formation and dissolution of Cu-Sn precipitate phases have been examined for Cu(Sn) alloy thin films. Cu(Sn) films were deposited by electron beam evaporation in either a Sn/Cu bilayer or Cu/Sn/Cu trilayer film structure, with overall Sn concentrations from 0.1 to 5 atomic percent. Analysis by in situ resistivity, calorimetry, electron diffraction and x-ray diffraction measurements indicates that the bilayer and trilayer films form the intermetallic phase η-Cu6Sn5 during film deposition. Upon heating, the ε-Cu3Sn phase forms at 170 °C, then this phase dissolves into the Cu matrix at approximately 350 °C. Finally, ζ-Cu10Sn3 phase forms and precipitates after heating to 500 °C and cooling to room temperature. The final resistivity of Cu/Sn/Cu films with more than 2 atomic percent Sn was greater than 3.5 μΩ-cm. However, resistivities from 1.9 to 2.5 μΩ-cm after annealing were obtained with Cu/Sn/Cu films containing less than 2 atomic percent Sn.