The performance characteristics of three different diazotype positive photoresists such as Shipley AZ2400, Kodak 809, and Polychrome PC129, are compared after optical exposure and electron-beam exposure. The development rates for both e-beam and optically exposed resists are measured by an in-situ automated technique using the IBM Film Thickness Analyzer. The optical exposure parameters are obtained at three wavelengths (4358, 4047, and 3650) by computer-controlled transmission measurements. The optical exposure and development parameters permit direct quantitative comparisons for these photoresists. The development rates of e-beam and optically exposed resists are compared. Also a comparison of e-beam sensitivity between the three resist systems is made by studying the resist profile shape after development in the scanning-electron microscope (SEM). Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.