Publication
IEEE T-ED
Paper

Performance characteristics of diazo-type photoresists under e-beam and optical exposure

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Abstract

The performance characteristics of three different diazotype positive photoresists such as Shipley AZ2400, Kodak 809, and Polychrome PC129, are compared after optical exposure and electron-beam exposure. The development rates for both e-beam and optically exposed resists are measured by an in-situ automated technique using the IBM Film Thickness Analyzer. The optical exposure parameters are obtained at three wavelengths (4358, 4047, and 3650) by computer-controlled transmission measurements. The optical exposure and development parameters permit direct quantitative comparisons for these photoresists. The development rates of e-beam and optically exposed resists are compared. Also a comparison of e-beam sensitivity between the three resist systems is made by studying the resist profile shape after development in the scanning-electron microscope (SEM). Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1978

Publication

IEEE T-ED

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