PaperDistribution of damage produced by ion implantation of silicon at room temperatureB.L. Crowder, R.S. TitleRadiation Effects
PaperBand structure of the layered transition-metal dichalcogenides: An experimental study by electron paramagnetic resonance on Nb-Doped MoS2R.S. Title, M.W. ShaferPhysical Review Letters
PaperElectrical and EPR Studies of Electrolytically Grown TiO2 (Rutile)G.V. Chandrashekhar, R.S. TitleJES
PaperFormation of amorphous silicon by ion bombardment as a function of ion, temperature, and doseF.F. Morehead, B.L. Crowder, et al.Journal of Applied Physics
