PaperFormation of amorphous silicon by ion bombardment as a function of ion, temperature, and doseF.F. Morehead, B.L. Crowder, et al.Journal of Applied Physics
PaperElectron-paramagnetic-resonance studies on arsenic acceptors in natural (2H) and synthetic (3R) MoS2 crystalsR.S. Title, M.W. ShaferPhysical Review B
PaperElectrical and EPR Studies of Electrolytically Grown TiO2 (Rutile)G.V. Chandrashekhar, R.S. TitleJES
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