R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Paper
P-i-n diodes for monolithic millimetre wave BiCMOS applications
Abstract
p-i-n diodes for millimetre wave applications were studied. The diodes were integrated into a BiCMOS technology, permitting monolithic millimetre wave circuits. The impact of process and layout variations on the insertion loss and isolation performance metrics was studied. Devices with an insertion loss of 1 dB and isolation of 17 dB at 60 GHz were obtained. © 2007 IOP Publishing Ltd.
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