L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
p-i-n diodes for millimetre wave applications were studied. The diodes were integrated into a BiCMOS technology, permitting monolithic millimetre wave circuits. The impact of process and layout variations on the insertion loss and isolation performance metrics was studied. Devices with an insertion loss of 1 dB and isolation of 17 dB at 60 GHz were obtained. © 2007 IOP Publishing Ltd.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
P.C. Pattnaik, D.M. Newns
Physical Review B
J.C. Marinace
JES
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters