J. Tersoff
Applied Surface Science
p-i-n diodes for millimetre wave applications were studied. The diodes were integrated into a BiCMOS technology, permitting monolithic millimetre wave circuits. The impact of process and layout variations on the insertion loss and isolation performance metrics was studied. Devices with an insertion loss of 1 dB and isolation of 17 dB at 60 GHz were obtained. © 2007 IOP Publishing Ltd.
J. Tersoff
Applied Surface Science
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R. Ghez, M.B. Small
JES