Publication
Physical Review B
Paper

Oxidation of GaAs(110): New results and models

View publication

Abstract

The oxidation of ultra high-vacuum-cleaved GaAs(110) surfaces has been studied with high-resolution, core-level photoemission excited with synchrotron radiation. The oxidation is spatially and chemically inhomogeneous, and both subsurface oxidation and multibonding geometries occur already at submonolayer coverages. © 1984 The American Physical Society.

Date

15 Oct 1984

Publication

Physical Review B

Authors

Topics

Share