Optimizing fabrication of buried oxide channel field effect transistors

In this paper we describe improved methods of fabrication for an oxide channel field effect transistor (OxFET) similar in architecture to a conventional FET. We demonstrate that a substrate treatment consisting of a low power oxygen ashing followed by annealing yields a strontium (A-site) terminated surface in single-crystal strontium titanate (STO). This surface termination of the substrate results in pulsed laser deposited cuprate-channel films of improved quality.