About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Optical study of strained ZnSe/GaAs and ZnMnSe/GaAs epilayers
Abstract
We studied strain-induced band splittings of ZnSe/GaAs and Zn 1-xMnxSe/GaAs epilayers of 0.064-3 μm thickness by reflectance and polarized photoluminescence. Polarized photolumi- nescence was found particularly useful in optical transition identification. The spectacular difference in magnetic field sensitivity of heavy hole and light hole exciton in ZnMnSe is also very helpful in transition identification. The evaluated heavy-light hole band splitting is in general accordance with previous data. An exceptionally strong variation of the strain with epilayer thickness is observed in the thickness range 0.5-2 μm.