Silicon-on-sapphire for RF Si systems 2000
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
The operation of a negative differential conductance (NDC) transistor fabricated on a high-mobility Si/Si1-xGex heterostructure wafer is described. The drain characteristic of this device shows a large NDC with current peak-to-valley ratios as high as 600 (100) at T = 0.4 K (T = 1.3 K). The NDC can be modulated over a wide range of current levels by either of two separately-contacted gate electrodes. The device shows bistable switching behavior in both current- and voltage-controlled circuit configurations. The novel operating principle of this transistor is described, along with its potential for future logic and memory applications.
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
S. Nelson, K. Ismail, et al.
Applied Physics Letters
S. Washburn, K. Ismail, et al.
Quantum Effect Physics, Electronics and Applications 1992
C.L. Schow, S.J. Koester, et al.
FiO 2007