About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Opening of the EPR bottleneck in amorphous GdxY0.33-xAl0.67
Abstract
The temperature dependence of the EPR linewidth and g shift are measured in amorphous evaporated films of GdxY0.33-xAl0.67 with 0.0008<x<0.33. Both the g shift and the Korringa slope of the linewidth-versus-temperature curve increase with decreasing x in a fashion which can be fitted to classic EPR bottleneck theory. This procedure yields the spin-lattice relaxation rate for the conduction electrons consisting of a "structural" term (1.3-6) × 1011 Hz and a term proportional to Gd concentration of 1×1013x. The latter is within 50% of the value in the crystalline counterpart, but the former is larger by a factor of 3 to 15, showing for the first time (aside from studies on liquids) the effect of amorphous structure on this relaxation rate. Similarity of unbottlenecked g factors and Korringa slopes of amorphous and crystalline materials suggest that the conduction band is not strongly affected by structure. © 1981 The American Physical Society.