On the integration of CMOS with hybrid crystal orientations

Abstract

Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with Lpoly about 85nm and tox=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.