On the Concentration Dependence of Far-IR Absorption by Sb-Doped Ge

Abstract

Nisida and Horii have made detailed measurements of the concentration dependence of the far infrared absorption by Sb donors in Ge. A qualitative explanation of these observations is proposed, in which the strain produced by the donors themselves is able to account for the linewidths and asymmetry of the absorption lines in the low concentration range. © 1970, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.