Publication
IEEE Electron Device Letters
Paper

Novel Properties of a 0.1-μm-Long Split-Gate MODFET

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Abstract

A MODFET with two 30-nm-long gates, separated by 40 nm, has been fabricated using ultrahigh-resolution electron-beam lithography. The proximity of the two gate fingers, together with the ability to independently bias them, results in the following features: a) tunability of the threshold voltage, b) enhancement of the transconductance especially at low current levels, c) reduction in short-channel effects, and d) high-voltage gain and cutoff frequency. © 1990 IEEE

Date

01 Jan 1990

Publication

IEEE Electron Device Letters

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