S. Guha, H. Munekata, et al.
Journal of Applied Physics
A new type of FET has been fabricated in which the gate is in direct contact with the channel; there is no intervening charge separating layer. Instead, the separation of gate and channel carriers is achieved by using the staggered band alignment of InAs/(Al, Ga)Sb such that a p+ (AI, Ga)Sb gate layer is placed in direct contact with the n-type InAs channel. The absence of a gate insulator dielectric represents the ultimate in vertical device scaling. At 77 K the measured devices show both current gain and voltage gain, and a maximum transconductance of 500 mS/mm has been observed. © 1991 IEEE
S. Guha, H. Munekata, et al.
Journal of Applied Physics
Devin Underwood, Joseph A. Glick, et al.
PRX Quantum
Yuan Taur, Douglas A. Buchanan, et al.
Proceedings of the IEEE
David J. Frank, Joerg Appenzeller
IEEE Electron Device Letters