E.J. Preisler, S. Guha, et al.
Applied Physics Letters
A series of III-V-based magnetic semiconductor heterostructures, p-type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam epitaxy. Studies on magnetotransport and magneto-optical properties show that perpendicular ferromagnetic order occurs in the heterostructures with thin (In,Mn)As layers. The origin is discussed in terms of both carrier- and strain-induced effects.
E.J. Preisler, S. Guha, et al.
Applied Physics Letters
E. Deleporte, T. Lebihen, et al.
Physical Review B
C.W. Snyder, B.G. Orr, et al.
Applied Physics Letters
S. Guha, H. Munekata, et al.
Journal of Applied Physics