Stable SRAM cell design for the 32 nm node and beyond
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
In this paper, an analytical model of intrinsic carbon-nanotube field-effect transistors is presented. The origins of the channel carriers are analyzed in the ballistic limit. A noniterative surface-potential model is developed based on an analytical electrostatic model and a piecewise constant quantum-capacitance model. The model is computationally efficient with no iteration or numerical integration involved, thus facilitating fast circuit simulation and system optimization. Essential physics such as drain-induced barrier lowering and quantum capacitance are captured with reasonable accuracy. © 2010 IEEE.
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
Brian L. Ji, Dale J. Pearson, et al.
IEEE Trans Semicond Manuf
David J. Frank
IEDM 2002
Swagath Venkataramani, Jungwook Choi, et al.
PACT 2017