About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
NiSi formation at the silicide/Si interface on the NiPt/Si system
Abstract
Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700°C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350°C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400-500°C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700°C, the Ni and Pt redistribute to form a uniform ternary.