M.A. Lutz, R.M. Feenstra, et al.
Surface Science
During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires1 in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers. © 2006 Elsevier Ltd. All rights reserved.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Ellen J. Yoffa, David Adler
Physical Review B
A. Krol, C.J. Sher, et al.
Surface Science