M. Hargrove, S.W. Crowder, et al.
IEDM 1998
During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires1 in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers. © 2006 Elsevier Ltd. All rights reserved.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Michiel Sprik
Journal of Physics Condensed Matter
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
K.N. Tu
Materials Science and Engineering: A