Conference paper
Silicon-on-sapphire for RF Si systems 2000
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
H. Ainspan, M. Soyuer
BCTM 1999
J.N. Burghartz, J.D. Cressler, et al.
ESSDERC 1991
Keith A. Jenkins, J.Y.-C. Sun
IEEE Electron Device Letters