Conference paper
6.25-GHz low DC power low-noise amplifier in SiGe
H. Ainspan, M. Soyuer, et al.
CICC 1997
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
H. Ainspan, M. Soyuer, et al.
CICC 1997
J.N. Burghartz, A.E. Ruehli, et al.
IEDM 1997
D. Friedman, M. Meghelli, et al.
VLSI Circuits 2001
J.N. Burghartz
Electrical Engineering