Conference paper
Integrated multilayer RF passives in silicon technology
J.N. Burghartz
SiRF 1998
Paper
Multilevel monolithic inductors in silicon technology
Abstract
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
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