Conference paper
6.25-GHz low DC power low-noise amplifier in SiGe
H. Ainspan, M. Soyuer, et al.
CICC 1997
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
H. Ainspan, M. Soyuer, et al.
CICC 1997
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ISSCC 2000
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ASICON 1996
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IEEE Journal of Solid-State Circuits