6.25-GHz low DC power low-noise amplifier in SiGe

Abstract

A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA's figure of merit Gain/(PDCxNF) of 0.56 mW-1 exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA's.