MONOLITHIC INTEGRATION OF A 3 GHZ, MESFET DETECTOR/PREAMPLIFIER.

Abstract

High-performance interdigitated metal-semiconductor-metal detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which has also been used to fabricate complex digital circuits. A shallow implant under the detector is shown to eliminate the undesirable low-frequency gain and large dark currents previously observed in these devices. Bandwidths as high as 3. 2 GHz have been observed for a detector-preamplifier combination with detector responsivities as high as 0. 45 A/W, and dark currents as low as 5 nA.