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Publication
DRC 2001
Conference paper
Mixed mode double-gate FET model
Abstract
A compact model to solve the complex behavior of double-gated field effect transistor (DGFET) was presented. The mixed-mode algorithm of the model transformed the DGFET into two single gate FETs in series. An effective perpendicular electric field, modified by the short-channel charge, was derived from DGFET and sub-threshold and short-channel effects were included.