A. Gangulee, F.M. D'Heurle
Thin Solid Films
We apply a mixed-basis formulation of pseudopotential total-energy electronic structure calculations in the context of iterative diagonalization techniques. The formulation combines a small set of auxiliary functions to describe the localized part of the wave function with a plane-wave basis set. The method is tested on low-symmetry configurations of interstitial oxygen in silicon. This method provides accuracy comparable to plane-wave basis-set calculations and requires less computational effort. Therefore, it appears to be a promising tool for the description of the electronic structure of systems with localized valence electrons. © 1992 The American Physical Society.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
J.C. Marinace
JES