About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE Microwave and Guided Wave Letters
Paper
Microwave Reflection Measurements on Doped Semiconductors with Picosecond Transient Radiation
Abstract
Broad-band microwave reflection spectroscopy is demonstrated with picosecond transient radiation from optoelectronically pulsed antennas. The validity of the technique is verified by reflection measurements on isotropic and anisotropic dielectrics. Reflection studies on a series of doped silicon samples demonstrate that the carrier dynamics in the 15–140 GHz frequency range are well described by a simple Drude model. © 1991 IEEE