J. Tersoff
Applied Surface Science
The existing discrepancy between theoretical models and experimental results for hydrogen-donor complexes in crystalline silicon is resolved using first-principles pseudopotential-density-functional calculations for the hydrogen-phosphorus pair. In the configuration which is the global energy minimum, H is located on the extension of a P-Si bond on the Si side, with the Si-H pair relaxing away from P by 0.6 A, leaving the P atom threefold coordinated. The calculated stretching and wagging vibrational frequencies associated with this configuration are in accord with experiment. © 1990 The American Physical Society.
J. Tersoff
Applied Surface Science
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
R.W. Gammon, E. Courtens, et al.
Physical Review B
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics