Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator transition (MIT): the single-parameter scaling of conductivity with temperature near a critical electron density. We obtain the scaling function β, which determines the length (or temperature) dependence of the conductance, β is smooth and monotonie, and linear in the logarithm of the conductance near the MIT, in agreement with the scaling theory for interacting systems. © 1998 Elsevier Science B.V. All rights reserved.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R. Ghez, M.B. Small
JES
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films