Publication
IEEE T-ED
Paper

Mesostructure Electronics

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Abstract

Control of composition during the growth of compound semiconductors, especially by molecular beam epitaxy (MBE), makes possible the fabrication of heterostructures with composition varying on a space scale of order ten to one hundred lattice constants. These have distinctive physical properties with possibilities of device applications. This paper considers some structures consisting of parallel layers, and discusses electronic phenomena involving conduction parallel to the layers and polarization normal to them. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1981

Publication

IEEE T-ED

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