Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 × 1) surface requires growth temperatures about 80°C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300°C to 400°C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface. © 1995.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
T.N. Morgan
Semiconductor Science and Technology
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000