A.J. Schell-Sorokin, G.W. Lynch
IEEE T-ED
We have studied stresses in thin Ge growing on Si(001), in situ and in real time, with submonolayer sensitivity. As a result of the 4.3% lattice mismatch, Ge films develop a compressive stress in the 2D growth regime, which saturates when 3D growth sets in. These measurements give new insight in the interatomic forces that play a dominant role in establishing growth mode and the generation of defects, and provide a new test for state-of-the-art total-energy calculations. © 1990 The American Physical Society.
A.J. Schell-Sorokin, G.W. Lynch
IEEE T-ED
M. Copel, M.C. Reuter, et al.
Physical Review Letters
L. Smit, R.M. Tromp, et al.
Surface Science
M. Copel, R.M. Tromp, et al.
Physical Review B