E.A. Stach, R. Hull, et al.
MRS Fall Meeting 1998
We have studied stresses in thin Ge growing on Si(001), in situ and in real time, with submonolayer sensitivity. As a result of the 4.3% lattice mismatch, Ge films develop a compressive stress in the 2D growth regime, which saturates when 3D growth sets in. These measurements give new insight in the interatomic forces that play a dominant role in establishing growth mode and the generation of defects, and provide a new test for state-of-the-art total-energy calculations. © 1990 The American Physical Society.
E.A. Stach, R. Hull, et al.
MRS Fall Meeting 1998
R.M. Tromp
ICPS Physics of Semiconductors 1984
E.A. Stachf, R. Hull, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
S. Tanaka, C.C. Limbach, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films