F.M. Ross, J. Tersoff, et al.
Journal of Electron Microscopy
We have studied stresses in thin Ge growing on Si(001), in situ and in real time, with submonolayer sensitivity. As a result of the 4.3% lattice mismatch, Ge films develop a compressive stress in the 2D growth regime, which saturates when 3D growth sets in. These measurements give new insight in the interatomic forces that play a dominant role in establishing growth mode and the generation of defects, and provide a new test for state-of-the-art total-energy calculations. © 1990 The American Physical Society.
F.M. Ross, J. Tersoff, et al.
Journal of Electron Microscopy
Y. Fujikawa, T. Sakurai, et al.
Physical Review B - CMMP
A.J. Schell-Sorokin, R.M. Tromp
Surface Science
F.K. LeGoues, J. Tersoff, et al.
Physical Review Letters