HIGH RESOLUTION ION SCATTERING ANALYSIS OF SEMICONDUCTOR SURFACES AND INTERFACES.

Abstract

Medium energy ion scattering, combined with the effects of channeling and blocking, is a powerful technique for the nondestructive analysis of the structure of surfaces and interfaces with high depth resolution (typically 3-5 A). This paper discusses the principles of the technique and illustrates these with recent experimental results obtained on UHV prepared clean silicon surfaces and silicon-metal interfaces.