About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Measurement of barrier heights in high permittivity gate dielectric films
Abstract
Based on theoretical studies of tunneling current phenomenon, a method for measuring barrier heights in metal-oxide-semiconductor structures is illustrated. Using this method, barrier heights associated with the Al 2O3 gate dielectric films are investigated. Also, the main conduction mechanism in Al2O3 gate dielectric films is identified to be tunneling. © 2002 American Institute of Physics.