Measurement and analysis of variability in 45 nm strained-Si CMOS technology

Abstract

A test-chip in a low-power 45 nm technology, featuring uniaxial strained-Si, has been built to study variability in CMOS circuits. Systematic layout-induced variation, die-to-die (D2D), wafer-to-wafer (W2W) and within-die (WID) variability has been measured over multiple wafers, analyzed and attributed to likely causes in the manufacturing process. Delay is characterized using an array of ring oscillators and transistor leakage current is measured with an on-chip ADC. The key results link systematic layout-dependent and die-to-die variability as being caused by gate patterning and material strain. In comparison to a previous 90 nm experiment, gate proximity now contributes less to frequency variability, causing a 2% change in overall performance, while strain has increased its contribution to about 5% of the overall performance. © 2009 IEEE.