Magnetic field dependence of resonant tunneling in thin metal-oxide-semiconductor structures

Abstract

The magnetic field dependence of resonant tunneling via sodium-induced localized states in thin-oxide metal-oxide-semiconductor structures has been measured. The resonant tunneling peaks are observed to both shift in energy and change in amplitude for all orientations of the applied magnetic field. The amplitude modulation is well accounted for by a magnetic field modulation of the density of states in the inversion layer. The energy shifts of the peaks are linear for magnetic field parallel to the sample surface and nonmonotonic for perpendicular field. These shifts are not understood. © 1987 The American Physical Society.