Markus F. Ritter, Andreas Fuhrer, et al.
Nature Communications
The extremely high hole mobilities attainable in strained germanium quantum wells (QW) provide a unique pathway to develop novel devices in the emerging field of quantum electronics. A major challenge associated with the growth of Ge QW structures using the industrial standard reduced-pressure chemical vapor deposition (RP-CVD) technique is the incorporation of unintentional impurities in the growing film. We will show that a compromise exists between the growth conditions that minimize the various impurities (mainly O and Si) and the abruptness of the QW. The purity of the incoming gas plays a central role in this compromise and will be discussed.
Markus F. Ritter, Andreas Fuhrer, et al.
Nature Communications
Davood Shahrjerdi, Bahman Hekmatshoar, et al.
ECS Meeting 2012
Stephen W. Bedell, Paul Lauro, et al.
Journal of Applied Physics
P. Hashemi, M. Kobayashi, et al.
VLSI Technology 2013